high performance isolated collector silicon bipolar transistor technical data features ? ideal for high gain, low noise applications ? transition frequency f t = 25 ghz ? typical performance at 1.8 ghz associated gain of 17 db and noise figure of 1.1 db at 2 v and 5 ma p 1db of 12 dbm at 2 v and 20 ma ? can be used without impedance matching applications ? lna, oscillator, driver amplifier, buffer amplifier, and down converter for cellular and pcs handsets and cordless telephones ? oscillator for tv delivery and tvro systems up to 10 ghz hbfp-0420 description agilents hbfp-0420 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead sc-70 (sot-343) surface mount plastic package. hbfp-0420 provides an associated gain of 17 db, noise figure of 1.1 db, and p 1db of 12 dbm at 1.8 ghz. because of high gain and low current characteristics, hbfp-0420 is ideal for cellular/ pcs handsets as well as for c-band and ku-band applications. this product is based on a 25 ghz transition frequency fabrication process, which enables the products to be used for high performance, low noise applica- tions at 900 mhz, 1.9 ghz, 2.4 ghz, and beyond. surface mount plastic package/ sot-343 (sc-70) outline 4t pin configuration collector emitter base emitter 03x note: package marking provides orientation and identification. 03 = device code x = date code character. a new character is assigned for each month, year
2 hbfp-0420 absolute maximum ratings absolute symbol parameter units maximum [1] v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 15.0 v ceo collector-emitter voltage v 4.5 i c collector current ma 36 p t power dissipation [2] mw 162 t j junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance: q jc = 300 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. p t limited by maximum ratings. electrical specifications, t c = 25 c symbol parameters and test conditions units min. typ. max. dc characteristics bv ceo collector-emitter breakdown voltage i c = 1 ma, open base v 4.5 i cbo collector-cutoff current v cb = 5 v, i e = 0 na 200 i ebo emitter-base cutoff current v eb = 1.5 v, i c = 0 m a35 h fe dc current gain v ce = 2 v, i c = 5 ma 50 80 150 rf characteristics f min minimum noise figure i c = 5 ma, v ce = 2 v, f = 1.8 ghz db 1.1 1.4 g a associated gain i c = 5 ma, v ce = 2 v, f = 1.8 ghz db 15.5 17 |s 21 | 2 insertion power gain i c = 20 ma, v ce = 2 v, f = 1.8 ghz db 17 p -1 db power output @ 1 db i c = 20 ma, v ce = 2 v, f = 1.8 ghz dbm 12 compression point
3 hbfp-0420 typical scattering parameters, v ce = 2 v, i c = 5 ma, t c = 25 c freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.1 0.746 -11.9 23.4 14.853 171.0 -41.4 0.009 84.8 0.985 -6.6 0.5 0.682 -55.6 21.9 12.473 139.8 -28.5 0.038 63.6 0.861 -29.4 0.9 0.607 -90.1 19.9 9.909 116.8 -25.0 0.056 49.3 0.696 -46.6 1.0 0.585 -97.5 19.3 9.181 112.2 -24.5 0.059 46.9 0.661 -49.3 1.5 0.532 -128.3 16.8 6.918 93.1 -22.9 0.072 37.2 0.516 -62.2 1.8 0.512 -143.1 15.5 5.952 83.4 -22.3 0.077 33.2 0.450 -67.7 2.0 0.502 -151.6 14.7 5.453 78.4 -21.9 0.080 31.2 0.419 -71.6 2.5 0.490 -169.8 12.9 4.422 65.8 -21.2 0.088 26.9 0.359 -78.4 3.0 0.483 -174.6 11.6 3.786 55.2 -20.5 0.095 23.4 0.314 -86.3 3.5 0.480 161.4 10.3 3.286 45.2 -19.8 0.102 19.8 0.286 -92.5 4.0 0.479 149.2 9.3 2.908 35.7 -19.2 0.110 16.3 0.266 -98.1 4.5 0.482 137.6 8.4 2.629 26.5 -18.5 0.118 12.5 0.248 -104.1 5.0 0.487 126.5 7.6 2.389 17.4 -17.9 0.127 8.1 0.233 -110.5 5.5 0.497 115.4 6.9 2.205 8.3 -17.3 0.136 3.5 0.209 -117.9 6.0 0.513 105.0 6.2 2.040 -0.8 -16.8 0.145 -1.5 0.189 -126.4 6.5 0.532 94.6 5.6 1.902 -9.8 -16.3 0.153 -7.1 0.161 -137.1 7.0 0.553 84.0 5.0 1.778 -18.7 -15.8 0.162 -12.6 0.134 -152.0 7.5 0.575 74.5 4.4 1.662 -27.5 -15.3 0.171 -18.2 0.115 -171.2 8.0 0.592 66.0 3.9 1.559 -36.1 -14.9 0.179 -24.0 0.110 167.1 8.5 0.609 58.2 3.3 1.469 -44.4 -14.6 0.186 -29.8 0.113 147.2 9.0 0.623 50.7 2.9 1.393 -52.6 -14.2 0.195 -35.4 0.120 130.6 9.5 0.635 43.0 2.4 1.312 -60.8 -13.9 0.202 -41.6 0.127 118.0 10.0 0.648 34.5 1.9 1.248 -69.1 -13.6 0.209 -48.0 0.130 103.9 hbfp-0420 noise parameters: v ce = 2 v, i c = 5 ma freq. f min g opt r n g a ghz db mag ang w db 0.9 1.00 0.281 28.8 9.6 22.19 1.0 1.02 0.266 36.6 9.2 21.39 1.5 1.10 0.187 68.3 7.6 18.30 1.8 1.14 0.175 94.1 6.8 16.92 2.0 1.18 0.154 118.4 6.1 16.21 2.5 1.25 0.184 146.5 5.4 14.34 3.0 1.32 0.226 165.9 5.0 13.00 3.5 1.39 0.254 -176.8 4.9 11.79 4.0 1.49 0.292 -162.3 5.0 10.79 4.5 1.58 0.312 -147.3 6.0 9.95 5.0 1.63 0.355 -135.5 6.8 9.22 5.5 1.75 0.375 -121.0 9.3 8.55 6.0 1.88 0.416 -108.5 12.3 7.99 6.5 1.94 0.453 -98.1 15.8 7.47 7.0 2.05 0.486 -84.4 21.4 6.99 7.5 2.15 0.506 -74.8 26.8 6.49 8.0 2.23 0.532 -65.0 33.6 6.04 8.5 2.47 0.556 -56.8 41.7 5.65 9.0 2.59 0.589 -48.4 50.4 5.32 9.5 2.63 0.610 -40.4 58.2 4.91 10.0 2.74 0.624 -31.0 68.3 4.56 s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. s and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point.
4 hbfp-0420 typical scattering parameters, v ce = 2 v, i c = 15 ma, t c = 25 c freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.1 0.481 -22.1 29.1 28.438 166.1 -43.0 0.007 82.3 0.959 -10.5 0.5 0.437 -91.4 26.0 19.969 124.7 -31.2 0.027 60.7 0.702 -41.4 0.9 0.416 -131.0 22.6 13.526 101.9 -28.2 0.039 53.4 0.500 -57.2 1.0 0.414 -138.0 21.9 12.378 97.8 -27.7 0.041 52.9 0.465 -59.6 1.5 0.415 -163.4 18.7 8.619 81.9 -25.5 0.053 49.6 0.341 -69.8 1.8 0.418 -174.6 17.2 7.254 74.2 -24.4 0.060 47.9 0.292 -74.4 2.0 0.421 178.9 16.3 6.549 69.7 -23.7 0.065 46.6 0.269 -77.6 2.5 0.428 165.4 14.4 5.262 59.3 -22.3 0.077 42.9 0.226 -84.1 3.0 0.435 153.6 12.9 4.418 49.9 -21.0 0.089 38.8 0.196 -91.1 3.5 0.439 143.2 11.6 3.811 41.0 -19.9 0.101 34.1 0.177 -96.8 4.0 0.442 133.3 10.5 3.362 32.4 -18.9 0.113 29.0 0.163 -102.1 4.5 0.447 123.7 9.6 3.024 23.9 -18.1 0.125 23.7 0.152 -107.2 5.0 0.455 114.1 8.8 2.749 15.4 -17.3 0.137 17.9 0.138 -113.4 5.5 0.467 104.6 8.0 2.522 6.8 -16.6 0.148 11.8 0.120 -121.1 6.0 0.484 95.5 7.3 2.327 -1.8 -16.0 0.159 5.4 0.100 -131.4 6.5 0.504 86.0 6.7 2.163 -10.4 -15.4 0.169 -1.0 0.077 -148.2 7.0 0.527 76.7 6.1 2.014 -18.9 -14.9 0.179 -7.6 0.059 -178.2 7.5 0.552 68.0 5.5 1.880 -27.4 -14.5 0.188 -14.3 0.060 144.1 8.0 0.572 60.4 4.9 1.765 -35.5 -14.1 0.197 -20.6 0.077 116.6 8.5 0.590 53.3 4.4 1.658 -43.6 -13.8 0.205 -27.1 0.096 100.7 9.0 0.604 46.4 3.9 1.565 -51.6 -13.4 0.213 -33.6 0.112 89.0 9.5 0.616 39.2 3.4 1.484 -59.6 -13.1 0.221 -40.3 0.123 77.9 10.0 0.630 31.4 3.0 1.406 -67.7 -12.9 0.228 -47.2 0.134 66.5 hbfp-0420 noise parameters: v ce = 2 v, i c = 15 ma freq. f min g opt r n g a ghz db mag ang w db 0.9 1.57 0.033 -135.5 8.0 23.88 1.0 1.58 0.054 -151.8 7.8 23.04 1.5 1.63 0.169 -155.2 6.7 19.79 1.8 1.67 0.252 -148.1 6.3 18.34 2.0 1.74 0.234 -158.3 6.4 17.52 2.5 1.72 0.306 -149.2 6.1 15.71 3.0 1.76 0.343 -142.2 6.5 14.24 3.5 1.84 0.365 -133.5 7.7 12.97 4.0 1.89 0.383 -124.4 9.4 11.89 4.5 1.97 0.407 -115.6 11.5 11.01 5.0 2.03 0.431 -106.3 14.1 10.22 5.5 2.15 0.463 -96.8 17.8 9.53 6.0 2.28 0.483 -87.3 22.9 8.89 6.5 2.36 0.513 -77.3 28.7 8.32 7.0 2.42 0.538 -67.8 35.5 7.79 7.5 2.54 0.560 -59.2 43.0 7.30 8.0 2.65 0.581 -51.4 51.7 6.85 8.5 2.83 0.602 -44.6 61.3 6.42 9.0 2.96 0.621 -37.2 71.0 5.99 9.5 3.10 0.640 -29.9 81.1 5.61 10.0 3.14 0.653 -21.8 90.5 5.23 s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. s and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point.
5 hbfp-0420 typical performance 0 5 10 15 25 20 0 2 48 6 10 associated gain (db) frequency (ghz) figure 1. associated gain vs. frequency and collector current at 2 v. 5 0 10 20 15 30 25 0 associated gain (db) collector current (ma) figure 2. noise figure vs. frequency and collector current at 2 v. figure 3. associated gain vs. collector current and frequency at 2 v. figure 5. associated gain vs. voltage (v ce ) at 5 ma. figure 6. noise figure vs. voltage (v ce ) at 5 ma. figure 4. noise figure vs. collector current and frequency at 2 v. 2 ma 5 ma 10 ma 15 ma 0 0.50 1.00 3.00 1.50 2.00 noise figure (db) collector current (ma) 2.50 01 2 4 5 36 voltage (v) voltage (v) 0 1 2 3 4 0 2 48 6 10 noise figure (db) frequency (ghz) 5 10 20 15 25 2 ma 5 ma 10 ma 15 ma 0.9 ghz 1.8 ghz 2.5 ghz 3 ghz 4 ghz 5 ghz 6 ghz 0.9 ghz 1.8 ghz 2.5 ghz 3 ghz 4 ghz 5 ghz 6 ghz 0 associated gain (db) 0.9 ghz 1.8 ghz 2.5 ghz 3 ghz 4 ghz 5 ghz 6 ghz 01 2 4 5 36 0.5 0 1.0 2.0 1.5 2.5 noise figure (db) 0.9 ghz 1.8 ghz 2.5 ghz 3 ghz 4 ghz 5 ghz 6 ghz 0 5 10 20 15 25 5 10 15 25 20
6 hbfp-0420 die model and pspice parameters cmp9 r cmp7 r cmp8 r cmp69 r r=1 oh r=.194 oh r=7.78 oh r =12 oh temp= model=dbe region= area= area=3 region= model=bjtmodel area= region= model=dcs temp= area= region= model = dbc temp= c =7e-3 pf c = 19e-3 pf xx cmp1 npnbjtsubst cmp5 c cmp6 c cmp2 diode cmp16 diode cmp3 diode b e xx xx c is=i.40507e-17 bv= ibv= imax= xti= tnom=21 kf= af= isr= nr= ikf= nbv= ibvl= nbvl= ffe= rs= cjo=2.393e-14 tt= eg= vj=0.729 m=0.44 n=1 fc=0.8 cmp10 diodemodelform # diode model # model = dbc is=ie-24 bv= ibv= imax= xti= tnom=21 kf= af= isr= nr= ikf= nbv= ibvl= nbvl= ffe= rs=2.17347e2 cjo=8.974e-14 tt= eg= vj=0.6 m=0.42 n= fc=0.8 cmp12 diodemodelform # diode model # model = dcs is=ie-24 bv= ibv= imax= xti= tnom=21 kf= af= isr= nr= ikf= nbv= ibvl= nbvl= ffe= rs= cjo=2.593e-14 tt= eg= vj=0.8971 m=2.292e-1 n=1.0029 fc=0.8 cmp11 diodemodelform # diode model # model = dce npn=yes pnp= vtf=0.8 itf=2.21805486e-1 ptf=0 xtb=0.7 approxob=yes forward bf=1e6 ikf=1.4737e-1 ise=7.094e-20 ne=1.006 vaf=4.4e1 nf=1 tf=5.3706e-12 xtf=20 reverse br=1 ikr=1.1e-2 isc= nc=2 var=3.37 nr=1.005 tr=4e-9 noise kf= af= kb= ab= fb= diode and junction eg=1.17 is=4.4746e-18 imax= xti=3 tnom=21 substrate is5= ns= parasitics rb=9.30144818 irb=3.029562e-6 rbm=.1 re= rc= cjc=2.7056e-14 vjc=.6775 mjc=0.3319 fc=0.8 cje=7.474248e-14 vje=0.9907 mje=0.5063 cjs= vjs= mjs= cmp68 bitmodelform # bjt model # model = bjtmodel xcjc=4.39790997e-1 this model can be used as a design tool. it has been tested on mds for various specifications. however, for more precise and accurate design, please refer to the measured data in this data sheet. note: the value of beta was high (bf = 1e6) to compensate for the fact that diode dbe reduces the current going into the base (current flows through dbe). the diodes are necessary to model the non-linear effects.
7 sot343 package model l = 0.2 nh l = 0.7 nh l = 0.2 nh l = 0.15 nh l = 0.22 nh llb l lt1 l lli l ll2 l c2t1 c c1t1 c cceb c c = 0.08 pf aground aground base collector emitter c = 0.05 pf c = 0.04 pf c = 0.04 pf l = 0.7 nh cmp44 l aground aground lle l l = 0.1 nh lt2 l c2t2 c c = 0.1 pf aground c1t2 c l = 0.5 nh l = 0.2 nh ll3 l lt3 l c1t3 c ccec c c2t3 c c = 0.1 pf c = 0.01 pf aground aground c = 0.144 pf c = 0.05 pf ccbc c
8 package dimensions sot-343 (sc-70 4 lead) e d a a1 b typ e e1 1.30 (0.051) bsc 1.15 (.045) bsc q h c typ l dimensions are in millimeters (inches) dimensions min. 0.80 (0.031) 0 (0) 0.25 (0.010) 0.10 (0.004) 1.90 (0.075) 2.00 (0.079) 0.55 (0.022) 0.450 typ (0.018) 1.15 (0.045) 0.10 (0.004) 0 max. 1.00 (0.039) 0.10 (0.004) 0.35 (0.014) 0.20 (0.008) 2.10 (0.083) 2.20 (0.087) 0.65 (0.025) 1.35 (0.053) 0.35 (0.014) 10 symbol a a1 b c d e e h e1 l q 1.15 (.045) ref 1.30 (.051) ref 1.30 (.051) 2.60 (.102) 0.55 (.021) typ 0.85 (.033) part number ordering information part number devices per reel container tape orientation hbfp-0420-blk 100 antistatic bag none hbfp-0420-tr1 3000 7" reel standard hbfp-0420-tr2 10,000 13" reel standard HBFP-0420-TR3 3000 7" reel reverse
9 device orientation tape dimensions for outline 4t user feed direction cover tape carrier tape reel end view 8 mm 4 mm tr1, tr2 top view end view 8 mm 4 mm tr3 top view 03x 03x 03x 03x 03x 03x 03x 03x p p 0 p 2 f w d 1 d e a 0 8 max. t 1 (carrier tape thickness) 5 max. b 0 k 0 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 2.24 0.10 2.34 0.10 1.22 0.10 4.00 0.10 1.00 + 0.25 0.088 0.004 0.092 0.004 0.048 0.004 0.157 0.004 0.039 + 0.010 cavity diameter pitch position d p 0 e 1.55 0.05 4.00 0.10 1.75 0.10 0.061 0.002 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 0.30 0.255 0.013 0.315 0.012 0.010 0.0005 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance
www.semiconductor.agilent.com data subject to change. copyright ? 2000 agilent technologies, inc. obsoletes 5968-5433e 5988-0132en (9/00)
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